High-Speed Optical Receivers With Integrated Photodiode in 130 nm CMOS

The design and measurement of two optical receivers with integrated photodiode in 130 nm CMOS is presented. The low bandwidth, which is typical for photodiodes in CMOS technologies, is circumvented by a differential photodiode topology on the one hand and by including an optimized equalizer in the receiver chain on the other hand. The low responsivity of a CMOS photodiode is compensated by a very low-noise design for the differential TIA. The disadvantage of such a low-noise design is its high power consumption. Therefore, a design strategy is presented where part of the circuit is biased in weak inversion. Doing so, the power consumption is decreased from 138 mW for the standard design to only 74.16 mW. Both designs are measured optically with 850 nm modulated light and are able to operate at 4.5 Gbit/s with a BER lower than 10-12. The sensitivities for this BER and speed are - 3.8 dBm and -3.4 dBm respectively. The receivers even work up to 5 Gbit/s for BER values around 10-9.

[1]  M. Berroth,et al.  10 Gb/s CMOS limiting amplifier for optical links , 2003, ESSCIRC 2004 - 29th European Solid-State Circuits Conference (IEEE Cat. No.03EX705).

[2]  A. Leven,et al.  SiGe differential transimpedance amplifier with 50 GHz bandwidth , 2002, 24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu.

[3]  F. Ellinger,et al.  A low-power 20-GHz 52-dB/spl Omega/ transimpedance amplifier in 80-nm CMOS , 2004, IEEE Journal of Solid-State Circuits.

[4]  H. Ito,et al.  High-speed and high-output InP-InGaAs unitraveling-carrier photodiodes , 2004, IEEE Journal of Selected Topics in Quantum Electronics.

[5]  Jan Genoe,et al.  Calculation of the current response of the spatially modulated light CMOS detector , 2001 .

[6]  H. Ogawa,et al.  1.25Gbps optical links for mobile handsets , 2008, 2008 IEEE Asian Solid-State Circuits Conference.

[7]  M. Ingels,et al.  A 1-Gb/s, 0.7-μm CM+ OS optical receiver with full rail-to-rail output swing , 1999, IEEE J. Solid State Circuits.

[8]  M. Steyaert,et al.  A Gigabit Optical Receiver with Monolithically Integrated Photodiode in 0.18 μm CMOS , 2006, 2006 Proceedings of the 32nd European Solid-State Circuits Conference.

[9]  Ashok V. Krishnamoorthy,et al.  1 Gbit/s CMOS photoreceiver with integrated detector operating at 850 nm , 1998 .

[10]  Anne-Johan Annema,et al.  Physical and electrical bandwidths of integrated photodiodes in standard CMOS technology , 2003, 2003 IEEE Conference on Electron Devices and Solid-State Circuits (IEEE Cat. No.03TH8668).

[11]  I. Adesida,et al.  Long-wavelength In/sub 0.53/Ga/sub 0.47/As metamorphic p-i-n photodiodes on GaAs substrates , 2001, IEEE Photonics Technology Letters.

[12]  Michiel Steyaert,et al.  A high-speed 850-nm optical receiver front-end in 0.18-μm CMOS , 2006 .

[13]  Horst Zimmermann,et al.  A transmission-line approach for modeling feedback resistors in integrated transimpedance amplifiers , 2003 .

[14]  Michiel Steyaert,et al.  A high-speed fully integrated optical receiver in standard 130nm CMOS , 2008, 2008 15th IEEE International Conference on Electronics, Circuits and Systems.

[15]  Bing J. Sheu,et al.  A monolithic GaAs receiver for optical interconnect systems , 1994 .

[16]  Kiyoshi Tanaka,et al.  Monolithic integration of 5-Gb/s optical receiver block for short distance communication , 1992 .

[17]  Renuka P. Jindal.  Gigahertz-band high-gain low-noise AGC amplifiers in fine-line NMOS , 1987 .

[18]  Paul Leroux,et al.  A High-Speed Optical Front-End with Integrated Photodiode in 90nm CMOS , 2004 .

[19]  B. Razavi,et al.  A 622 Mb/s 4.5 pA//spl radic/Hz CMOS transimpedance amplifier [for optical receiver front-end] , 2000, 2000 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.00CH37056).

[20]  P.W. Shumate,et al.  Fiber-to-the-Home: 1977–2007 , 2008, Journal of Lightwave Technology.

[21]  B. Nauta,et al.  A 3-Gb/s optical detector in standard CMOS for 850-nm optical communication , 2005, IEEE Journal of Solid-State Circuits.

[22]  Michel Steyaert,et al.  Optimised equaliser for differential cmos photodiodes , 2006 .

[23]  M. Steyaert,et al.  Power efficient 4.5Gbit/s optical receiver in 130nm CMOS with integrated photodiode , 2008, ESSCIRC 2008 - 34th European Solid-State Circuits Conference.

[24]  Michiel Steyaert,et al.  A high-speed 850-nm optical receiver front-end in 0.18-/spl mu/m CMOS , 2006, IEEE Journal of Solid-State Circuits.

[25]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .

[26]  M. Kuijk,et al.  Asynchronous 250-Mb/s optical receivers with integrated detector in standard CMOS technology for optocoupler applications , 2000, IEEE Journal of Solid-State Circuits.

[27]  Willy Sansen,et al.  Stability and noise performance of constant transimpedance amplifier with inductive source , 1989 .

[28]  Mark Ingels,et al.  A 1-Gb/s, 0.7-/spl mu/m CMOS optical receiver with full rail-to-rail output swing , 1999 .

[29]  P. Leroux,et al.  Gigabit photodiodes in standard digital nanometer CMOS technologies , 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..

[30]  Wei-Zen Chen,et al.  A 2.5 Gbps CMOS Fully Integrated Optical Receicer with Lateral PIN Detector , 2007, 2007 IEEE Custom Integrated Circuits Conference.

[31]  Eduard Säckinger.  Broadband Circuits for Optical Fiber Communication: Säckinger/Broadband , 2005 .

[32]  T. Ishibashi,et al.  InP-InGaAs uni-traveling-carrier photodiode with improved 3-dB bandwidth of over 150 GHz , 1998, IEEE Photonics Technology Letters.

[33]  Samuel K. Moore,et al.  Multicore is bad news for supercomputers , 2008 .

[34]  R. Bauknecht,et al.  InP-InGaAs single HBT technology for photoreceiver OEIC's at 40 Gb/s and beyond , 2000, Journal of Lightwave Technology.

[35]  Wei-Zen Chen,et al.  A 3.125 Gbps CMOS fully integrated optical receiver with adaptive analog equalizer , 2007, 2007 IEEE Asian Solid-State Circuits Conference.