Growth Mechanism and Defects of ‐Oriented β‐SiC Films Deposited by Laser Chemical Vapor Deposition

Two kinds of -oriented β-SiC films with pyramidlike and needlelike morphologies were obtained by laser chemical vapor deposition. Their mean grain size ( ) as a function of the distance from substrate (h) follows power laws of ∝ h0.62 and ∝ h0.71, respectively. The planar defects in pyramidlike films were perpendicular to the growth direction, whereas those in needlelike β-SiC films inclined to growth direction, which can be annihilated with meeting of anti-couple defect. This self-vanish of defects would develop a new approach to fabricate high quality -oriented β-SiC.

[1]  Timo T. Saha,et al.  Chemical vapor deposited silicon carbide mirrors for extreme ultraviolet applications , 1997 .

[2]  A. Yamamoto,et al.  Characterization of MOVPE InN films grown on 3c-SiC/Si(111) templates , 2007 .

[3]  P. Koidl,et al.  Chemical vapour deposition and characterization of smooth {100}-faceted diamond films , 1993 .

[4]  D. Vanderbilt,et al.  Atomic scale calculations in materials science , 1989 .

[5]  V. Radmilović,et al.  Formation of fiber texture in β-SiC films deposited on Si(100) substrates , 2007 .

[6]  V. Heine,et al.  Inter-layer interactions and the origin of SiC polytypes , 1988 .

[7]  M. Mehregany,et al.  Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization , 2001 .

[8]  D. Kurt Gaskill,et al.  Comparison of epitaxial graphene on Si-face and C-face 4H SiC formed by ultrahigh vacuum and RF furnace production. , 2009, Nano letters.

[9]  Takashi Goto,et al.  High-Speed Epitaxial Growth of β-SiC Film on Si(111) Single Crystal by Laser Chemical Vapor Deposition , 2012 .

[10]  T. Goto,et al.  Laser chemical vapor deposition of SiC films with CO2 laser , 2010 .

[11]  A. Gandhi,et al.  Densification of silicon carbide using oxy-nitride additives for space-based telescope mirror applications , 2011 .

[12]  Mehran Mehregany,et al.  A study of electrical properties and microstructure of nitrogen-doped poly-SiC films deposited by LPCVD , 2007 .

[13]  J. Butler,et al.  Simulation of faceted film growth in three dimensions: microstructure, morphology and texture , 1999 .

[14]  H. Matsunami,et al.  Antiphase-domain-free growth of cubic SiC on Si(100) , 1987 .

[15]  Segall,et al.  Electronic-structure study of the (110) inversion domain boundary in SiC. , 1990, Physical review. B, Condensed matter.

[16]  P. Koidl,et al.  Texture formation in polycrystalline diamond films , 1990 .

[17]  H. Fujioka,et al.  Low‐temperature growth of high quality AlN films on carbon face 6H‐SiC , 2008 .

[18]  H. Nagasawa,et al.  3C-SiC hetero-epitaxial growth on undulant Si(0 0 1) substrate , 2002 .

[19]  V. Radmilović,et al.  Quantitative TEM analysis of 3-D grain structure in CVD-grown SiC films using double-wedge geometry , 2007 .

[20]  Kan Bun Cheng,et al.  Growth of 3C-SiC Thin Film on AlN/Si(100) with Atomically Abrupt Interface via Tailored Precursor Feeding Procedure , 2010 .

[21]  A. Fleischman,et al.  Epitaxial growth of 3C–SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition , 1995 .

[22]  Lianmeng Zhang,et al.  High‐Speed Preparation of ‐ and ‐Oriented β‐SiC Films by Laser Chemical Vapor Deposition , 2014 .

[23]  T. Fuyuki,et al.  Heteroepitaxial growth of single crystalline 3C‐SiC on Si substrates by gas source molecular beam epitaxy , 1992 .

[24]  S. Reshanov,et al.  Reliable Method for Eliminating Stacking Fault on 3C-SiC(001) , 2012 .

[25]  Herbert A. Will,et al.  Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices , 1983 .

[26]  M. Kitabatake,et al.  Simulations and experiments of SiC heteroepitaxial growth on Si(001) surface , 1993 .

[27]  A. Nakano,et al.  Brittle dynamic fracture of crystalline cubic silicon carbide "3C-SiC… via molecular dynamics simulation , 2005 .

[28]  Pu Hongbin,et al.  Structure analysis of SiCGe films grown on SiC , 2008 .

[29]  C. Zorman,et al.  Grain size control of (111) polycrystalline 3C-SiC films by doping used as folded-beam MEMS resonators for energy dissipation , 2009 .

[30]  Mikael Syväjärvi,et al.  Homogeneous large-area graphene layer growth on 6H-SiC(0001) , 2008 .

[31]  F. Auret,et al.  Single scan defect identification by deep level transient spectroscopy using a two‐phase lock‐in amplifier (IQ‐DLTS) , 1988 .

[32]  Thijssen.  Simulations of polycrystalline growth in 2+1 dimensions. , 1995, Physical review. B, Condensed matter.

[33]  S. Saddow,et al.  Patterned substrate with inverted silicon pyramids for 3C–SiC epitaxial growth: A comparison with conventional (001) Si substrate , 2013 .

[34]  K. Abe,et al.  Characterization of polycrystalline SiC films grown by HW-CVD using silicon tetrafluoride , 2008 .

[35]  H. Nagasawa,et al.  Reducing Planar Defects in 3C–SiC , 2006 .