Band‐edge discontinuities of strained‐layer InxGa1−xAs/GaAs heterojunctions and quantum wells

The conduction‐band discontinuity (ΔEc ) and the band‐gap offset (ΔEgh) of InxGa1−xAs/GaAs multiple quantum wells grown on GaAs substrates by molecular beam epitaxy are investigated for 0<x<0.3. The band gap of strained InxGa1−xAs , determined from the excitonic transition of room‐temperature transmission spectra, is found to be linearly dependent on x and is in good agreement with the calculated values. The band‐gap offset is found to be ΔEgh =1.15x eV. The conduction‐band offset, compiled from published data, is ΔEc =0.75x eV, and thus (ΔEc /ΔEgh)=0.65 independent of x.

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