Hydrogenated amorphous silicon position sensitive detector

The design, fabrication, and characterization of newly developed hydrogenated amorphous silicon position sensitive detectors (a‐Si:H PSDs) which employ a tunnel metal‐insulator‐semiconductor (MIS) structure fabricated by anodic oxidation processes are described. Tunnel MIS structure is chosen as the a‐Si:H PSD structure, since it offers high breakdown voltage compared to a‐Si:H pin or Schottky‐type structures. PSD process includes two‐step anodic oxidation of a‐Si:H: (1) oxidation in the dark to passivate defects and shunt paths introduced during the growth of a‐Si:H layer and (2) oxidation with light to grow thin native oxide to provide barrier between metal and a‐Si:H. The fabricated large‐area, two‐dimensional PSDs, as large as 3 cm×3 cm, show the incident beam position within error of less than 2% of the length of PSD.

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