论文信息 - Intense xenon capillary discharge extreme-ultraviolet source in the 10-16-nm-wavelength region.

Intense xenon capillary discharge extreme-ultraviolet source in the 10-16-nm-wavelength region.

We have observed intense extreme-ultraviolet emission, within the 10-16-nm-wavelength range, emitted by a xenon capillary discharge plasma. Within a 0.3-nm bandwidth centered at 13.5 nm the axial emission intensity was comparable with that from the brightest laser-produced plasma sources, and a similar intensity was measured at approximately 11.3 nm. This source could thus be suitable for extreme-ultraviolet imaging applications, such as extreme-ultraviolet lithography.

M. Klosner | W. Silfvast

[1] Gerry O'Sullivan,et al. Spectra of Xe vii, viii, and ix in the extreme ultraviolet: 4d–mp, nf transitions , 1983 .

[2] Jack Sugar,et al. Analysis of the 4d 9 –4d 8 5p transitions in nine-times ionized xenon (Xe x) , 1983 .

[3] R S Rosen,et al. Multilayer mirror technology for soft-x-ray projection lithography. , 1993, Applied optics.

[4] J B Murphy,et al. Synchrotron radiation sources and condensers for projection x-ray lithography. , 1993, Applied optics.

[5] S. Bowyer,et al. Continuous emission source covering the 50-300-A band. , 1993, Applied optics.

[6] D W Phillion,et al. X-ray production ˜ 13 nm from laser-produced plasmas for projection x-ray lithography applications. , 1993, Applied optics.

[7] K M Skulina,et al. Molybdenum/beryllium multilayer mirrors for normal incidence in the extreme ultraviolet. , 1995, Applied optics.

[8] M A Klosner,et al. Intense plasma discharge source at 13.5 nm for extreme-ultraviolet lithography. , 1997, Optics letters.

[9] Kevin D. Krenz,et al. High-power extreme-ultraviolet source based on gas jets , 1998, Advanced Lithography.