Growth and electrical properties of epitaxial PbSexTe1−x layers

Epitaxial layers of PbSexTe1−x (0⩽x⩽1) have been grown on the (111) faces of cleaved BaF2 and SrF2 single crystals by vacuum deposition of the evaporated binary compounds. Structural studies indicate that the layers are single crystals with widely spaced low‐angle grain broundaries that propagate from the substrates. Due to the smaller thermal expansion of the substrate the layers are strained, except at x=0 and x=1. The functional dependence of the elastic strain on layer composition, e∝x (1−x), and its magnitude suggest that the thermal expansion and/or elastic constants of PbSexTe1−x are nonlinear functions of x. The Hall mobilities decrease from about 1×103 cm2/V s (300 K) and 3×104 cm2/V s (77 K) at x (1−x) =0 to about 3×102 cm2/V s (300 K) and 5×103 cm2/V s (77 K) at x=0.5, apparently as a result of alloy scattering.

[1]  H. Holloway,et al.  Thin‐film (Pb,Sn)Se photodiodes for 8–12‐μm operation , 1976 .

[2]  V. Lambert.  X‐ray examination of epitaxial PbSnTe and PbTe , 1975 .

[3]  H. M. Manasevit,et al.  The Use of Metalorganics in the Preparation of Semiconductor Materials VI . Formation of IV–VI Lead and Tin Salts , 1975 .

[4]  H. Holloway,et al.  Epitaxial PbSe Schottky-barrier diodes for infrared detection , 1974 .

[5]  S. Kaiser,et al.  Epitaxial PbSe and Pb1−xSnxSe: Growth and electrical properties , 1974 .

[6]  G. Lippmann,et al.  Elastic Constants of PbSe , 1971, August 16.

[7]  R. F. Brebrick.  Composition stability limits for the rocksalt-structure phase (Pb1−ySny)1−xTex from lattice parameter measurements , 1971 .

[8]  H. Holloway,et al.  Isothermal Effusion Sources for Vacuum Deposition of Solid Solutions , 1970 .

[9]  H. Holloway,et al.  Epitaxial Growth of Lead Tin Telluride , 1970 .

[10]  R. Roy,et al.  Micro-indentation hardness variation as a function of composition for polycrystalline solutions in the systems PbS/PbTe, PbSe/PbTe, and PbS/PbSe , 1969 .

[11]  H. Belson,et al.  Elastic Constants, Thermal Expansion, and Debye Temperature of Lead Telluride , 1968 .

[12]  D. Engelhardt,et al.  Étude de la réaction à trois corps 11B(p, αα)α de 150 keV à 2 MeV , 1968 .

[13]  B. Yates,et al.  The low-temperature thermal expansion and vibrational properties of alkaline earth fluorides , 1967 .

[14]  A. J. Strauss,et al.  Inversion of Conduction and Valence Bands inPb1−xSnxSeAlloys , 1967 .

[15]  J. Dimmock,et al.  Band Structure and Laser Action in Pb x Sn 1-x Te , 1966 .

[16]  R. F. Bis,et al.  Alloy Films of PbTexSe1−x , 1966 .

[17]  Jay N. Zemel,et al.  Electrical and Optical Properties of Epitaxial Films of PbS, PbSe, PbTe, and SnTe , 1965 .

[18]  W. L. Bond,et al.  Precision lattice constant determination , 1960 .

[19]  J. Gilman.  Plastic anisotropy of lif and other rocksalt-type crystals , 1959 .

[20]  W. W. Scanlon,et al.  Recent advances in the optical and electronic properties of PbS, PbSe, PbTe and their alloys , 1959 .