论文信息 - Photoresponse Study of Polycrystalline Diamond thin Film Schottky Diodes - 字舞流文

Photoresponse Study of Polycrystalline Diamond thin Film Schottky Diodes

Mark A. Prelas | E. J. Charlson | E. M. Charlson | J. M. Meese | T. Stacy | R. Roychoudhury | E. Charlson | E. Charlson | G. Zhao | M. Hajsaid | R. Roychoudhury | A. H. Khan | Z. He | M. Prelas | G. Zhao | T. Stacy | M. Hajsaid | A. Khan | Z. He

[1] J. M. Meese,et al. Effect of mechanical stress on current-voltage characteristics of thin film polycrystalline diamond Schottky diodes , 1993 .

[2] S. M. Sze,et al. Physics of semiconductor devices , 1969 .

[3] S. A. Grot,et al. The barrier height of Schottky diodes with a chemical‐vapor‐deposited diamond base , 1989 .

[4] D. Moses,et al. Ultraviolet photoresponse characteristics of diamond diodes. , 1991, Applied optics.

[5] G. Gildenblat,et al. The electrical properties and device applications of homoepitaxial and polycrystalline diamond films , 1991, Proc. IEEE.

[6] J. Mort,et al. Photosensitization of diamond thin films , 1990 .

[7] H. Tuan,et al. EXTRINSIC PHOTOCONDUCTIVITY IN CHEMICAL VAPOR DEPOSITION DIAMOND , 1991 .

[8] C. W. Hatfield,et al. Rectification and internal photoemission in metal/CVD diamond and metal/CVD diamond/silicon structures , 1990 .