18.5 GHz bandwidth monolithic preamplifier using AlGaAs/GaAs ballistic collection transistors
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A circuit technique for improving the transimpedance flatness and output matching characteristics in a preamplifier is proposed. An 18.5 GHz bandwidth monolithic preamplifier with a transimpedance of 52dBΩ has been fabricated with AlGaAs/GaAs ballistic collection transistors.
[1] H. Ichino,et al. Application of AlGaAs/GaAs ballistic collection transistors to multiplexer and preamplifier circuits , 1991, International Electron Devices Meeting 1991 [Technical Digest].