Identification of the primary compensating defect level responsible for determining blocking voltage of vertical GaN power diodes
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S. R. Lee | M. Marinella | R. Fleming | A. Allerman | M. Crawford | O. Aktas | J. Flicker | M. King | R. Kaplar | I. Kizilyalli | A. Fischer | Stephen R. Lee | A. Armstrong | J. Dickerson | I. C. Kizilyalli