论文信息 - Tandem electro-absorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short-pulse generation

Tandem electro-absorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short-pulse generation

A novel device of tandem multiple quantum wells (MQWs) electroabsorption modulators (EAMs) monolithically integrated with DFB laser is fabricated by ultra-low-pressure (22 mbar) selective area growth (SAG) MOCVD technique. Experimental results exhibit superior device characteristics with low threshold of 19 mA, output light power of 4.5 mW, and over 20 dB extinction ratio when coupled into a single mode fiber. Moreover, over 10 GHz modulation bandwidth is developed with a driving voltage of 2 V. Using this sinusoidal voltage driven integrated device, 10GHz repetition rate pulse with a width of 13.7 ps without any compression elements is obtained.

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