Carrier heating dynamics in semiconductor waveguide saturable absorbers

Pump‐probe measurements in GaAs/GaAlAs waveguide saturable absorbers reveal an ultrafast transient in the absorption recovery dynamics, and a second slower signal before the final recovery. We present a model of the differential transmission measurements which includes high field and space charge effects in addition to the spectral hole burning and carrier heating typically found in semiconductor amplifiers. The results of the model indicate that field‐induced carrier heating strongly influences the absorption dynamics in saturable absorbers used for mode‐locked diode lasers.