论文信息 - Theory of optical beam induced current images of defects in semiconductors

Theory of optical beam induced current images of defects in semiconductors

We present a model of image formation in scanning optical microscopes operating in the optical beam induced current mode. A perturbation analysis is used, a point spread function is introduced, and specific images of point defects obtained. It is found that the resolution is not limited by the diffusion length.

T. Wilson | E. McCabe | E. Mccabe

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