Aqueous Base Developable Deep UV Resist Systems Based On Novel Monomeric And Polymeric Dissolution Inhibitors

Certain "onium salt" photochemical acid generators such as triphenylsulfonium and diphenyliodonium metal halides work as dissolution inhibitors for novolac resins in a fashion similar to diazonaphthoquinone. The two-component deep UV positive resists can be imaged in an aqueous base at 25 m.1/cm2 of 254 nm radiation. The system allows addition of a third component. For example, polyphthalaldehyde, a novel and efficient dissolution inhibitor miscible with novolac resins, is completely reverted to the starting monomer in the novolac matrix upon postbake. The design is based on removal of the polymeric dissolution inhibitor from the exposed areas through acid-catalyzed depolymerization to volatile monomer. Such three-component resist systems offer high deep UV sensitivity (2 mJ/cmh), high contrast (4.2), and wide formulation and process latitudes.

[1]  L. F. Thompson,et al.  A Sensitive Novolac‐Based Positive Electron Resist , 1981 .

[2]  William D. Hinsberg,et al.  Use Of A Quartz Crystal Microbalance Rate Monitor To Examine Photoproduct Effects On Resist Dissolution , 1985, Advanced Lithography.

[3]  Elsa Reichmanis,et al.  A novel approach to o‐nitrobenzyl photochemistry for resists , 1981 .

[4]  Fumio Murai,et al.  Novolac Based Positive Electron Beam Resist Containing a Polymeric Dissolution Inhibitor: Preparation and Exposure Characteristics , 1984 .

[5]  Hiroshi Ito,et al.  Thermally Developable, Positive Tone, Oxygen RIE Barrier Resist for Bilayer Lithography , 1989 .

[6]  Jean M. J. Fréchet,et al.  NEW APPROACH TO IMAGING SYSTEMS INCORPORATING CHEMICAL AMPLIFICATION: SYNTHESIS AND PRELIMINARY EVALUATION OF NOVEL RESISTS BASED ON TERTIARY COPOLYCARBONATES. , 1986 .

[7]  C. Willson,et al.  Chemical amplification in the design of dry developing resist materials , 1983 .

[8]  Hiroshi Ito,et al.  Novel Polymeric Dissolution Inhibitor for the Design of Sensitive, Dry Etch Resistant, Base‐Developable Resist , 1988 .

[9]  James V. Crivello,et al.  A new preparation of triarylsulfonium and -selenonium salts via the copper(II)-catalyzed arylation of sulfides and selenides with diaryliodonium salts , 1978 .

[10]  Hiroshi Ito,et al.  Poly(p-tert-butoxycarbonyloxystyrene): a convenient precursor to p-hydroxystyrene resins , 1983 .

[11]  Lester A. Pederson,et al.  New Diazoketone Dissolution Inhibitors For Deep U.V. Photolithography , 1987, Advanced Lithography.

[12]  James V. Crivello,et al.  Diaryliodonium Salts. A New Class of Photoinitiators for Cationic Polymerization , 1977 .

[13]  Hiroshi Ito,et al.  Evaluation of Onium Salt Cationic Photoinitiators as Novel Dissolution Inhibitor for Novolac Resin , 1988 .

[14]  C. Willson,et al.  APPLICATIONS OF PHOTOINITIATORS TO THE DESIGN OF RESISTS FOR SEMICONDUCTOR MANUFACTURING. , 1983 .

[15]  Hiroshi Ito,et al.  A Sensitive, Etch Resistant, Positive Tone E‐Beam Resist System , 1988 .