Potential of silicon carbide MOSFETs in the DC/DC converters for future HVDC offshore wind farms

High-voltage direct current (HVDC) is more and more often implemented for long distance electrical energy transmission, especially for off-shore wind farms. In this study, a full DC off-shore wind farm, which requires a high-power and high-voltage DC/DC converter, is considered. In order to reduce the size of the converter, the trend is to increase operating frequency. Silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) are becoming industrially available and give scope for the realisation of high-performance DC/DC converters based on modular architectures. This study presents a prospective analysis of the potential of such devices in HVDC power systems. Considering the characteristics of Si insulated-gate bipolar transistor and SiC MOSFET power modules, two DC/DC converter topologies are compared in terms of losses and number of components. In conclusion, a study of the efficiency based on converter energy loss is presented.

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