Processing andDefect Control inAdvanced GeTechnologies

Toachieve therequired driveperformance for sub32nm technology nodesthereisstrong interest inexploring theuseofGe-based technologies. Thispaperreviews some important processing aspects froma defect control viewpoint. Attention isgiven tocrystal growth, shallow junction formation andgermanidation techniques, respectively. Themainfocus ison defect related aspects. Thelastsection dealswiththedevice performance andtheimpactofprocessing ondevice leakage current andlowfrequency noise behavior. IndexTerms - Getechnology, defect control, leakage current, device performance, shallow junctions, germanidation, LFnoise.