论文信息 - Characterization of process‐induced strains in GaAs/Ga0.7Al0.3As quantum dots using room‐temperature photoreflectance

Characterization of process‐induced strains in GaAs/Ga0.7Al0.3As quantum dots using room‐temperature photoreflectance

Using contactless photoreflectance at 300 K, we have studied several GaAs/Ga0.7Al0.3As quantum dot arrays fabricated by reactive‐ion etching using SiCl4. The spectrum from a control sample that had no dots also was recorded. From the observed shifts of the fundamental conduction to heavyand of the process‐induced strain in the dots.

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