Characterization of process‐induced strains in GaAs/Ga0.7Al0.3As quantum dots using room‐temperature photoreflectance
暂无分享,去创建一个
Fred H. Pollak | H. Qiang | C. M. Sotomayor Torres | P. Wang | F. Pollak | P. D. Wang | C. Torres | Y. S. Tang | Y. Tang | H. Qiang
[1] G. Bastard,et al. Phonon scattering and energy relaxation in two-, one-, and zero-dimensional electron gases. , 1990, Physical review. B, Condensed matter.
[2] J. Kotthaus,et al. The Spectroscopy of Quantum Dot Arrays , 1993 .
[3] Fred H. Pollak,et al. Modulation spectroscopy of semiconductors: bulk/thin film, microstructures, surfaces/interfaces and devices , 1993 .
[4] S. Adachi. GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications , 1985 .
[5] Hwang,et al. Stimulated emission in semiconductor quantum wire heterostructures. , 1989, Physical review letters.
[6] François Hache,et al. Quantum‐confined Stark effect in very small semiconductor crystallites , 1989 .
[7] L. Felton,et al. Size effects on optical transition energies in CdS x Se 1−x semiconductor nanocrystal glass composites , 1992 .
[8] J. Gambino,et al. Liquid junctions for characterization of electronic materials. III. Modulation spectroscopies of reactive ion etching of Si , 1989 .
[9] C. Wilkinson,et al. Fabrication and characterization of one dimensional hole gas , 1992 .
[10] R. H. Williams,et al. Reactive ion etching induced damage in GaAs and Al0.3Ga0.7As using SiCl4 , 1992 .
[11] Phonons in Semiconductor Nanostructures , 1993 .