A GaN HEMT driver IC with programmable slew rate and monolithic negative gate-drive supply and digital current-mode control

This work presents an intelligent driver IC for 400 V GaN-based Power Factor Correction (PFC) applications. The targeted power level of the converter is 100 W, with a switching frequency above 500 kHz. The IC was implemented in a 140 nm automotive BCD SOI process, while the GaN HEMT and Schottky diode were optimized in a Si-fab compatible GaN-on-Si process. A low-Ron DMOS is integrated in the driver IC to achieve high-speed cascode switching operation. The chip also features a novel dual-mode drive scheme with monolithic negative drive voltage capability and programmable slew rate, as well as a digital peak current-mode controller. Advanced digital PFC control schemes can therefore be implemented, while EMC performance and efficiency can be optimized through active slope control.

[1]  J. A. Croon,et al.  600V-900V GaN-on-Si Process Technology for Schottky Barrier Diodes and Power Switches Fabricated in a Standard Si-Production Fab , 2012 .

[2]  Antonello Monti,et al.  Integrated circuit implementation for a GaN HFETs driver circuit , 2008 .

[3]  Fred C. Lee,et al.  Design and evaluation of GaN-based dual-phase interleaved MHz critical mode PFC converter , 2014, 2014 IEEE Energy Conversion Congress and Exposition (ECCE).

[4]  Dragan Maksimovic,et al.  GaN-FET based dual active bridge DC-DC converter , 2011, 2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

[5]  C. Adragna,et al.  New Fixed-Off-Time PWM modulator provides constant frequency operation in boost PFC pre-regulators , 2008, 2008 International Symposium on Power Electronics, Electrical Drives, Automation and Motion.

[6]  S. Heikman,et al.  A 97.8% Efficient GaN HEMT Boost Converter With 300-W Output Power at 1 MHz , 2008, IEEE Electron Device Letters.

[7]  M. Kanamura,et al.  Enhancement-mode GaN MIS-HEMTs for power supplies , 2010, The 2010 International Power Electronics Conference - ECCE ASIA -.

[8]  F. Lee,et al.  Evaluation and Application of 600 V GaN HEMT in Cascode Structure , 2014, IEEE Transactions on Power Electronics.

[9]  Xinbo Ruan,et al.  DCM boost PFC converter with high input PF , 2010, 2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).