论文信息 - A study of thick 3C-SiC epitaxial layers grown on 6H-SiC substrates by sublimation epitaxy in vacuum - 字舞流文

A study of thick 3C-SiC epitaxial layers grown on 6H-SiC substrates by sublimation epitaxy in vacuum

E. V. Bogdanova | R. Yakimova | A. Lebedev | S. Lebedev | A. Tregubova | M. Shcheglov | V. Zelenin | B. S. Razbirin | D. Nel’son | P. L. Abramov | M. Suvajarvi | E. Bogdanova