Photoexcitation of electron-hole pairs during SIMS
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[1] M. Nonnenmacher,et al. Thin film characterization by laser interferometry combined with SIMS , 1988 .
[2] J. Kempf. Electrical activation of low-fluence boron implantation in silicon studied by PCV in combination with SIMS , 1988 .
[3] Y. Homma,et al. Surface sputtering rate reduction and its effect on SIMS depth profiling in cesium‐ion‐bombarded GaAs , 1985 .
[4] Dieter Bäuerle,et al. Laser Processing and Diagnostics , 1984 .
[5] H. Oechsner,et al. Thin film and depth profile analysis , 1984 .
[6] E. Schulz. Sputtering by particle bombardment. I. Physical sputtering of single‐element solids. Hg. von R. Behrisch. Topics in applied physics, vol. 47. Berlin/Heidelberg/New York: Springer‐Verlag 1981. X, 281 S., geb. DM 85,–. , 1983 .
[7] J. Kempf,et al. 3 to 15 keV Ar+ induced Auger electron emission from Si and Ar , 1977 .
[8] S. M. Sze,et al. Physics of semiconductor devices , 1969 .