论文信息 - Suppression of leakage current in Schottky barrier metal–oxide–semiconductor field-effect transistors

Suppression of leakage current in Schottky barrier metal–oxide–semiconductor field-effect transistors

In this article we investigate the subthreshold behavior of PtSi source/drain Schottky barrier metal–oxide–semiconductor field-effect transistors. We demonstrate very large on/off ratios on bulk silicon devices and show that slight process variations can result in anomalous leakage paths that degrade the subthreshold swing and complicate investigations of device scaling.

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