An improved band-anticrossing model – including the positional dependence of nitrogen – for InGaNAs∕GaAs quantum well lasers

The positional dependence of the localized nitrogen (N) within the quantum well is included with the band-anti-crossing model that describes the interaction of the GaInAs conduction band with the localized N defect. It is found that N located at the center of the well interacts more strongly with the InGaAs conduction band than N localized near the edge of the quantum well. Different distributions of N are investigated by studying the conduction band edge shift, energy level splitting, dipole moments, and gain. These quantities are found to be highly dependent upon the position of the N.

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