Research on the crystal phase and orientation of Ga2O3 Hetero-epitaxial film

[1]  M. Yoshimoto,et al.  Rapid homoepitaxial growth of (010) β-Ga2O3 thin films via mist chemical vapor deposition , 2021, Materials Science in Semiconductor Processing.

[2]  Z. Hassan,et al.  Effects of post-deposition annealing temperature in nitrogen/oxygen/nitrogen ambient on polycrystalline gallium oxide films , 2021 .

[3]  Rong Zhang,et al.  Study of β-Ga2O3 films hetero-epitaxially grown on off-angled sapphire substrates by halide vapor phase epitaxy , 2021 .

[4]  T. He,et al.  Crystalline properties of ε-Ga2O3 film grown on c-sapphire by MOCVD and solar-blind ultraviolet photodetector , 2020 .

[5]  V. Nikolaev,et al.  Hydrogen influence on electrical properties of Pt-contacted α-Ga2O3/ϵ-Ga2O3 structures grown on patterned sapphire substrates , 2020, Journal of Physics D: Applied Physics.

[6]  Gang Wang,et al.  Band alignment of p-type oxide/ε-Ga2O3 heterojunctions investigated by x-ray photoelectron spectroscopy , 2020 .

[7]  Weihua Tang,et al.  Fabrication of ϵ-Ga2O3 solar-blind photodetector with symmetric interdigital Schottky contacts responding to low intensity light signal , 2020, Journal of Physics D: Applied Physics.

[8]  Jared M. Johnson,et al.  Phase transformation in MOCVD growth of (AlxGa1−x)2O3 thin films , 2020 .

[9]  Z. Fogarassy,et al.  In situ TEM study of κ→β and κ→γ phase transformations in Ga2O3 , 2020 .

[10]  M. Lira-Cantú,et al.  Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes , 2019, Materials Today Energy.

[11]  M. Yang,et al.  Crystal Phase Control of ε-Ga2O3 Fabricated using by Metal-Organic Chemical Vapor Deposition , 2019, Journal of the Korean Physical Society.

[12]  A. Tiwari,et al.  Growth and characterization of β-Ga2O3 thin films by sol-gel method for fast-response solar-blind ultraviolet photodetectors , 2018, Journal of Alloys and Compounds.

[13]  G. Du,et al.  Growth Pressure Controlled Nucleation Epitaxy of Pure Phase ε- and β-Ga2O3 Films on Al2O3 via Metal–Organic Chemical Vapor Deposition , 2018 .

[14]  Baolin Zhang,et al.  Study on the optical properties of β-Ga2O3 films grown by MOCVD , 2017, Journal of Materials Science: Materials in Electronics.

[15]  R. Agarwal,et al.  Study of photoconduction properties of CVD grown β-Ga2O3 nanowires , 2016 .

[16]  Claudio Ferrari,et al.  Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD , 2016 .

[17]  Jaime A. Freitas,et al.  Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition , 2016 .

[18]  Daniela Gogova,et al.  Homo- and heteroepitaxial growth of Sn-doped β-Ga2O3 layers by MOVPE , 2015 .

[19]  Gary S. Tompa,et al.  Large-Area MOCVD Growth of Ga2O3 in a Rotating Disc Reactor , 2015, Journal of Electronic Materials.

[20]  Tae Geun Kim,et al.  Improved performance of Ga2O3/ITO‐based transparent conductive oxide films using hydrogen annealing for near‐ultraviolet light‐emitting diodes , 2014 .

[21]  Zbigniew Galazka,et al.  Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE , 2014 .

[22]  M. Baldini,et al.  Heteroepitaxy of Ga2(1‑x)In2xO3 layers by MOVPE with two different oxygen sources , 2014 .

[23]  Hongdi Xiao,et al.  Structural and optical properties of β-Ga2O3 films deposited on MgAl2O4 (100) substrates by metal-organic chemical vapor deposition , 2014 .

[24]  Yan Chen,et al.  Fabrication and UV‐sensing properties of one‐dimensional β‐Ga2O3 nanomaterials , 2013 .

[25]  In Gyu Lee,et al.  Electrical and photocurrent properties of a polycrystalline Sn-doped β-Ga2O3 thin film , 2021 .

[26]  Hongdi Xiao,et al.  Effect of annealing on the structural and optical properties of β-Ga2O3 films prepared on gadolinium gallium garnet (110) by MOCVD , 2018 .