An inductive-coupling link for 3D integration of a 90nm CMOS processor and a 65nm CMOS SRAM

This paper presents a three-dimensional (3D) system integration of a commercial processor and a memory by using inductive coupling. A 90nm CMOS 8-core processor, back-grinded to a thickness of 50µm, is mounted face down on a package by C4 bump. A 65nm CMOS 1MB SRAM of the same thickness is glued on it face up, and the power is provided by conventional wire-bonding. The two chips under different supply voltages are AC-coupled by inductive coupling that provides a 19.2Gb/s data link. Measured power and area efficiency of the link is 1pJ/b and 0.15mm2/Gbps, which is 1/30 and 1/3 in comparison with the conventional DDR2 interface respectively [1]. The power efficiency is improved by narrowing a transmission data pulse to 180ps. Reduced timing margin for sampling the narrow pulse, on the other hand, is compensated against timing skews due to layout and PVT variations by a proposed 2-step timing adjustment using an SRAM through mode. All the bits of the SRAM is successfully accessed with no bit error under changes of supply voltages (±5%) and temperature (25°C, 55°C).

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