Self-rectifying and forming-free unipolar HfOx based-high performance RRAM built by fab-avaialbe materials

In this paper, we report a high performance, forming-free and self-rectifying unipolar HfOx based RRAM fabricated by fab-available materials. Highlight of the demonstrated RRAM include 1) CMOS technology friendly materials and process, 2) excellent self-rectifying behavior in LRS (>103 @ 1 V), 3) forming-free unipolar resistive switching, 4) wide read-out margin for high density cross-point memory devices (number of word-line >106 for worst case condition).