In0.7Ga0.3As quantum well MOSFETs with Al2O3/HfO2 toward subthreshold swing of ∼60 mV/dec
暂无分享,去创建一个
Richard J. W. Hill | Hyuk-Min Kwon | Dae-Hyun Kim | Dae Hong Ko | Tae-Woo Kim | P. Kirsch | Daehyun Kim | W. Maszara | Tae-Woo Kim | R. Hill | S. Shin | W. Park | D. Koh | H. Kwon | Paul Kirsch | Donghyi Koh | Chan Soo Shin | Won Kyu Park | Seung Heon Shin | Youngdae Cho | W. Maszara | Y. Cho | D. Ko | Chan-Soo Shin
[1] S. Koveshnikov,et al. Addressing the gate stack challenge for high mobility InxGa1-xAs channels for NFETs , 2008, 2008 IEEE International Electron Devices Meeting.
[2] P. D. Kirsch,et al. Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al2O3/HfO2 (EOT < 1 nm) for low-power logic applications , 2013, 2013 IEEE International Electron Devices Meeting.
[3] Y. J. Lee,et al. Surface passivation of III-V compound semiconductors using atomic-layer-deposition grown Al2O3 , 2005 .
[4] Dimitri A. Antoniadis,et al. A new self-aligned quantum-well MOSFET architecture fabricated by a scalable tight-pitch process , 2013, 2013 IEEE International Electron Devices Meeting.
[5] G. Bersuker,et al. InGaAs MOSFET performance and reliability improvement by simultaneous reduction of oxide and interface charge in ALD (La)AlOx/ZrO2 gate stack , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).
[6] R. Degraeve,et al. Beyond interface: The impact of oxide border traps on InGaAs and Ge n-MOSFETs , 2012, 2012 International Electron Devices Meeting.
[7] G. Dewey,et al. Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation , 2011, 2011 International Electron Devices Meeting.
[8] M. Urteaga,et al. E-mode planar Lg = 35 nm In0.7Ga0.3As MOSFETs with InP/Al2O3/HfO2 (EOT = 0.8 nm) composite insulator , 2012, 2012 International Electron Devices Meeting.
[9] ETB-QW InAs MOSFET with scaled body for improved electrostatics , 2012, 2012 International Electron Devices Meeting.
[10] N. Taoka,et al. 1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density , 2012 .
[11] J. Alamo. Nanometre-scale electronics with III–V compound semiconductors , 2011, Nature.
[12] R. Chau,et al. Benchmarking nanotechnology for high-performance and low-power logic transistor applications , 2004, IEEE Transactions on Nanotechnology.