Ga(1−x)AlxAs/Ga(1−y)AlyAs double‐heterostructure room‐temperature lasers grown by metalorganic chemical vapor deposition

Room‐temperature operation of Ga(1−x)AlxAs/Ga(1−y)AlyAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition (MO‐CVD) has been achieved. These devices have Ga(1−y)AlyAs active layers of 0.8≲y≲0.12 and emit in the wavelength range 8000<λ<8300 A. Broad‐area Fabry‐Perot lasers with pulsed threshold current densities as low as ∼1.2 kA/cm2 have been fabricated. These lasers are produced from five‐layer epitaxial structures grown entirely by the MO‐CVD process and are the first such devices to be fabricated from materials grown by a vapor‐phase process.