Avalanche compact model featuring SiGe HBTs characteristics up to BVcbo

The cut-off frequencies of silicon-germanium hetero-junction bipolar transistors (SiGe HBTs) have entered the THz range at the cost of high current density and relatively low breakdown voltages. Typically, the common-emitter breakdown voltage with open base (BVCEO) is used to indicate the allowed breakdown voltage related operation limit. However, an open base (i.e. an infinite source impedance) is rarely encountered in actual circuits, so that BVCEO may be exceeded to a certain extent, maximal up to the open-emitter breakdown voltage BVCBO. Therefore, compact HBT models need to be accurate beyond BVCEO up to BVCBO. In this paper, the enhancement of the avalanche current implemented in the latest version of HICUM/L2 is presented. The model has been validated for different types of advanced SiGe:C HBTs over a wide range of collector-base voltages and temperatures.

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