论文信息 - 0.25 mu m gate length N-InGaP/InGaAs/GaAs HEMT DCFL circuit with lower power dissipation than high-speed Si CMOS circuits

0.25 mu m gate length N-InGaP/InGaAs/GaAs HEMT DCFL circuit with lower power dissipation than high-speed Si CMOS circuits

The 0.25- mu m-gate N-InGaP/InGaAs/GaAs HEMT significantly improves DCFL circuit power dissipation to 70 mu W/gate and reduces the supply voltage to 0.6 V with a sufficient noise margin of 0.15 V. The development of the short gate HEMT with no short channel effects is the key to achieving the low power dissipation required for VLSI fabrication. The results are significant to future HEMT VLSI applications.<<ETX>>

[1] M. Suzuki,et al. Pseudomorphic n-InGaP/InGaAs/GaAs grown by MOVPE for HEMT LSIs , 1991 .

[2] M. Abe,et al. A Hemt Lsi For A Multibit Data Register , 1988, 1988 IEEE International Solid-State Circuits Conference, 1988 ISSCC. Digest of Technical Papers.

[3] Y. Asada,et al. A gigahertz cryogenic HEMT pseudorandom number generator chip set , 1990, 1990 37th IEEE International Conference on Solid-State Circuits.

[4] Y. Nakasha,et al. A 9.6 Gb/s HEMT ATM switch LSI for B-ISDN , 1992, GaAs IC Symposium Technical Digest 1992.

[5] Hiroshi Ito,et al. New phase-shifting mask with highly transparent SiO2 phase shifters , 1990, Advanced Lithography.

[6] Masayuki Abe,et al. Short-channel effects in subquarter-micrometer-gate HEMTs: simulation and experiment , 1989 .

[7] Yasuhisa Omura,et al. Subfemtojoule deep submicrometer-gate CMOS built in ultra-thin Si film on SIMOX substrates , 1991 .

[8] M. Suzuki,et al. A 45 K-gate HEMT array with 35-ps DCFL and 50-ps BDCFL gates , 1991 .

[9] T. Mimura,et al. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions , 1980 .

[10] Y. Yamashita,et al. 0.2 mu m or less i-line lithography by phase-shifting-mask technology , 1990, International Technical Digest on Electron Devices.

[11] E. Mitani,et al. A 1.2-ns HEMT 64-kb SRAM , 1991 .