characteristics of epitaxial Schottky Au barrier diode on p+ diamond substrate

Abstract Epitaxial p-type Schottky barrier diodes on synthetic p+ substrates were analysed in terms of their reverse I V characteristics. A new electronic model was developed to describe the excess leakage current generally observed in epitaxial diodes. This current is attributed to homogeneously distributed defects, acting only on a small fraction of the diode surface area, bypassing the Schottky barrier contact. Passivation experiments are reported to reduce their density.