Ultra-thin Nitride/oxide Stack Dielectric Produced By In-situ Jet Vapor Deposition

in-situ Deposition This paper reports our recent work on the formation of ultra-thin (24A to 50A) nitride/oxide stack dielectrics by an in-situ jet vapor deposition (JVD) technique. We will show that the ultra-thin JVD N/O stack combines the advantages of the JVD nitride (higher dielectric constant than oxide) and the excellent silicon oxide/Si interface. It also shows lower gate leakage current and higher reliability than straight oxide or nitride. These are attractive properties for continued gate dielectric scaling beyond the limit of straight thermal oxide.

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