Impact of programming mechanisms on the performance and reliability of nonvolatile memory devices based on Si nanocrystals
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T.P. Chen | A. Du | M. Yang | A. Trigg | L. Ding | T.P. Chen | A. Du | L. Ding | C. Ng | C.Y. Ng | M. Yang | J.B. Yang | C.M. Li | A. Trigg | J.B. Yang | C. Li
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