Structural and electrical properties of Germanium-doped Sb70Te30 eutectic thin films

[1]  J. González-Hernández,et al.  Effects of Ge addition on the optical and electrical properties of eutectic Sb70Te30 films , 2007 .

[2]  T. Lui,et al.  Variation of Microstructure and Electrical Conductivity of Amorphous AgInSbTe and SbTe Films during Crystallization , 2007 .

[3]  Bart J. Kooi,et al.  Influence of capping layers on the crystallization of doped SbxTe fast-growth phase-change films , 2006 .

[4]  Keiji Tanaka,et al.  Electronic Properties of Amorphous and Crystalline Ge2Sb2Te5 Films , 2005 .

[5]  A. Edwards,et al.  Theory of persistent, p-type, metallic conduction in c-GeTe , 2005 .

[6]  L. V. Pieterson,et al.  Phase-change recording materials with a growth-dominated crystallization mechanism: A materials overview , 2005 .

[7]  M. Lankhorst,et al.  Low-cost and nanoscale non-volatile memory concept for future silicon chips , 2005, Nature materials.

[8]  J. Hosson,et al.  On the crystallization of thin films composed of Sb3.6Te with Ge for rewritable data storage , 2004 .

[9]  Yung-Sung Hsu,et al.  Optical Properties and Crystallization Characteristics of Ge-Doped Sb70Te30 Phase Change Recording Film , 2003 .

[10]  B. Jacobs,et al.  Prospects of Doped Sb–Te Phase-Change Materials for High-Speed Recording , 2002, International Symposium on Optical Memory and Optical Data Storage Topical Meeting.

[11]  Masud Mansuripur,et al.  Crystallization behavior of Ge-doped eutectic Sb70Te30 films in optical disks. , 2002, Applied optics.

[12]  S. Ashida,et al.  Recording Characteristics of Ge Doped Eutectic SbTe Phase Change Discs with Various Compositions and Its Potential for High Density Recording , 2002 .

[13]  Guo-Fu Zhou,et al.  Phase-Change Media for High-Numerical-Aperture and Blue-Wavelength Recording , 2001 .

[14]  Matthias Wuttig,et al.  Laser induced crystallization of amorphous Ge2Sb2Te5 films , 2001 .

[15]  F. Sánchez-Bajo,et al.  The use of the JMAYK kinetic equation for the analysis of solid-state reactions: critical considerations and recent interpretations , 1995 .

[16]  M. Chen,et al.  Time‐resolved reflection and transmission studies of amorphous Ge‐Te thin‐film crystallization , 1993 .

[17]  S. Ranganathan,et al.  The three activation energies with isothermal transformations: applications to metallic glasses , 1981 .

[18]  J. Tauc,et al.  Amorphous and liquid semiconductors , 1974 .

[19]  N. Mott,et al.  Electronic Processes In Non-Crystalline Materials , 1940 .