Low-loss 0.13-µm CMOS 50 – 70 GHz SPDT and SP4T switches

This paper presents 50–70 GHz single-pole double-throw (SPDT) and single-pole four-throw (SP4T) switches built using a low-cost 0.13-µm CMOS process. The switches are based on tuned λ/4 designs with output matching networks. High substrate resistance together with deep trenches and isolation moats are used for low insertion loss. The SPDT and SP4T switches result in a measured insertion loss of 2.0 and 2.3 dB at 60 GHz, with an isolation of ≫ 32 dB and ≫ 22 dB, respectively. The measured output port-to-port isolation is ≫ 27 dB for both designs. The P1dB is 13–14 dBm with a measured IIP3 of ≫ 23 dBm for both switches. Both designs have a return loss better than −10 dB at all ports from 50 to 70 GHz. The active chip area is 0.39×0.32 mm2 (SPDT) and 0.59×0.45 mm2 (SP4T). To our knowledge, this paper presents the lowest loss 60 GHz SPDT and SP4T switches and also the highest isolation SPDT switch in any CMOS technology to-date.

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