MgO-based tunnel junction material for high-speed toggle magnetic random access memory
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Saied N. Tehrani | Renu W. Dave | Jijun Sun | Srinivas V. Pietambaram | R. W. Dave | Johan Åkerman | Gregory W. Grynkewich | Mark DeHerrera | J. Slaughter | K. Smith | S. Tehrani | M. Deherrera | G. Grynkewich | R. Dave | S. Pietambaram | J. Sun | Jon M. Slaughter | K. Smith | G. Steiner | B. Craigo | B. Craigo | J. Åkerman | G. Steiner | S. Pietambaram | G. Grynkewich | M. DeHerrera
[1] Jon M. Slaughter,et al. Magnetoresistive random access memory using magnetic tunnel junctions , 2003, Proc. IEEE.
[2] J. Janesky,et al. Exchange coupling control and thermal endurance of synthetic antiferromagnet structures for MRAM , 2004, IEEE Transactions on Magnetics.
[3] Koji Ando,et al. Giant tunneling magnetoresistance effect in low-resistance CoFeB∕MgO(001)∕CoFeB magnetic tunnel junctions for read-head applications , 2005 .
[4] S. Yuasa,et al. Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions , 2004, Nature materials.
[5] P. L. Trouilloud,et al. Magnetoresistance measurement of unpatterned magnetic tunnel junction wafers by current-in-plane tunneling , 2003 .
[6] K. Tsunekawa,et al. 230% room temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions , 2005, INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005..
[7] R. W. Dave,et al. A 4-Mb toggle MRAM based on a novel bit and switching method , 2005, IEEE Transactions on Magnetics.
[8] A. Panchula,et al. Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers , 2004, Nature materials.