Electrical and optical performance of mid-wavelength infrared InAsSb heterostructure detectors
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Piotr Martyniuk | Emilia Gomółka | Małgorzata Kopytko | Krystian Michalczewski | Łukasz Kubiszyn | Artur Kębłowski | Waldemar Gawron | Józef Piotrowski | Jarosław Rutkowski
[1] K. Michalczewski,et al. Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate , 2016 .
[2] Antoni Rogalski,et al. High-Operating-Temperature Infrared Photodetectors , 2007 .
[3] J. R. Pedrazzani,et al. Benefits and limitations of unipolar barriers in infrared photodetectors , 2013 .
[4] Alexander Soibel,et al. Type-II Superlattice Infrared Detectors , 2011 .
[5] Z. Orman,et al. Epitaxial InAs detectors optically immersed to GaAs microlenses , 2001, SPIE Defense + Commercial Sensing.
[6] K. Michalczewski,et al. Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy , 2016 .
[7] R. Jones. Immersed radiation detectors , 1962 .
[8] G. Wicks,et al. nBn detector, an infrared detector with reduced dark current and higher operating temperature , 2006 .