Silane dissociation products in deposition discharges

Time‐dependent production of higher‐silane gases and a‐Si:H film are measured relative to decomposed silane in rf and dc, hot and cold cathode, static‐gas discharges. From the absence of higher‐silane production in very low silane partial‐pressure discharges, it is inferred that most higher silanes are produced by gas‐phase SiH2‐initiated reactions. The higher silanes are thus tracers of SiH2, while the film production traces the fraction of H, SiH, and SiH3 in the initial decomposition. From the measured stable product yields, we deduce that SiH4→SiH2+2H is the dominant electron‐collisional dissociation channel.

[1]  A. Gallagher,et al.  Surface reaction probability of film‐producing radicals in silane glow discharges , 1990 .

[2]  A. Gallagher,et al.  Spatial distribution of a-Si:H film-producing radicals in silane rf glow discharges , 1990 .

[3]  M. Kushner,et al.  Production of disilane and silyl sticking coefficients during plasma‐enhanced chemical vapor deposition of hydrogenated amorphous silicon , 1989 .

[4]  J. Perrin,et al.  a-Si:H Deposition from SiH4 and Si2H6 rf-Discharges: Pressure and Temperature Dependence of Film Growth in Relation to α-γ Discharge Transition , 1988 .

[5]  T. Goto,et al.  Measurement of the SiH3 Radical Density in Silane Plasma using Infrared Diode Laser Absorption Spectroscopy , 1988 .

[6]  A. Gallagher,et al.  Argon sputtering analysis of the growing surface of hydrogenated amorphous silicon films , 1988 .

[7]  Alan Gallagher,et al.  Neutral radical deposition from silane discharges , 1988 .

[8]  J. Jasinski,et al.  Absolute rate constants for the reaction of silylene with hydrogen, silane, and disilane , 1988 .

[9]  J. Perrin,et al.  Surface reactions of radicals during deposition of amorphous semiconductors by photochemical decomposition of molecular hydrides , 1987 .

[10]  J. Perrin,et al.  Surface reaction and recombination of the SiH3 radical on hydrogenated amorphous silicon , 1987 .

[11]  G. W. Cullen.  Proceedings of the Tenth International Conference on Chemical Vapor Deposition , 1987 .

[12]  R. Robertson,et al.  Mono‐ and disilicon radicals in silane and silane‐argon dc discharges , 1986 .

[13]  J. Schmitt,et al.  High-information infrared spectroscopy of unstable molecules , 1986 .

[14]  Makoto Suzuki,et al.  Reactions of SiH2(X̄1A1) with H2, CH4, C2H4, SiH4 and Si2H6 at 298 K , 1985 .

[15]  P. A. Longeway,et al.  Analysis of a flowing silane dc discharge in the presence of a hot surface , 1985 .

[16]  Zhiyu Wang,et al.  Electron impact spectroscopy of silane and germane , 1985 .

[17]  R. Robertson,et al.  Total and partial electron collisional ionization cross sections for CH4, C2H6, SiH4, and Si2H6 , 1984 .

[18]  J. Jasinski,et al.  Detection of SiH2 in silane and disilane glow discharges by frequency modulation absorption spectroscopy , 1984 .

[19]  P. A. Longeway,et al.  Decomposition kinetics of a static direct current silane glow discharge , 1984 .

[20]  J. Perrin,et al.  Growth of hydrogenated amorphous silicon due to controlled ion bombardment from a pure silane plasma , 1983 .

[21]  J. Perrin,et al.  Dissociation cross sections of silane and disilane by electron impact , 1982 .

[22]  C. E. Melton,et al.  Radiolysis of Methane in a Wide‐Range Radiolysis Source of a Mass Spectrometer. I. Individual and Total Cross Sections for the Production of Positive Ions, Negative Ions, and Free Radicals by Electrons , 1967 .

[23]  J. W. Otvos,et al.  Cross-sections of Molecules for Ionization by Electrons , 1956 .