X-band CPW LNA by Flip-chip

This paper presents an X-band CPW LNA MMIC bonded by a novel interconnect-FCT (Flip Chip Technology). FCT has many advantages for assembly method of RF applications. Compared with wire-bonding and TAB, it allows the highest package density, the shortest signal paths and the lowest interconnection parasitic effect. The LNA was fabricated at GaAs MMIC foundry line with ion-implant and 0.8 μm gate process. In order to decrease the disturbing of the substrate opposite to the MMICs CPW takes the place of microstrip as the microwave transmission line, because CPW can constrain the electromagnetic field in a small region. The operation frequency of the module is 9.2～10.3 GHz, and the gain is 12.1 dB.