论文信息 - On the role of space-charge scattering in epitaxial GaAs

On the role of space-charge scattering in epitaxial GaAs

Electron mobility was measured in liquid phase epitaxial GaAs of moderate purity. The relevant charge carrier scattering mechanisms were investigated. It is found that the measured mobility can only be interpreted taking into account scattering on space-charge regions besides lattice and impurity scattering. The implications of space-charge scattering are discussed and it is suggested that this scattering mechanism is an almost universally occurring phenomenon in GaAs and presumably in other compound semiconductors, too. [Russian Text Ignored]

I. Bertóti | B. Pödör | N. Nádor

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