TAC-IGBT: An improved IGBT structure

An improved Trench Insulated Gate Bipolar Transistors (TIGBT), called the Trench Accumulation Layer Controlled Insulated Gate Bipolar Transistor (TAC-IGBT) is proposed. In this new device, the P base of the Conventional TIGBT (CT-IGBT) is completely removed, an accumulation channel is incorporated. Numerical simulation results indicate that the structure has lower on-state voltage drop, larger latching current density and smaller gate charge. At the condition of the collector current is 5.0×10−5A./µm, the on-state voltage drop of the TAC-IGBT is 0.5V lower than the CT-IGBT structure. The latching current density increases nearly one order of magnitude. The gate charge needed for the TAC-IGBT is less than 1/3 of the CT-IGBT structure. Furthermore, the TAC-IGBT is more simple and cheaper for fabrication.

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