Angular dependence of sputtering yield of amorphous and polycrystalline materials

An analytical formula is developed for the evolution of angular dependence of sputtering yields by extending the theory of sputtering yield proposed by Sigmund. We demonstrate that the peak of sputtering yield at oblique incidence can be attributed to a balance between the increased energy deposited on the surface by incident ion which enhances the sputtering yield and the decreased depth travelled by recoil atom which reduces the sputtering yield. The predicted dependence of sputtering yield on the incident angle is in good agreement with experimental observations.

[1]  P. Sigmund.  ON THE NUMBER OF ATOMS DISPLACED BY IMPLANTED IONS OR ENERGETIC RECOIL ATOMS , 1969 .

[2]  R. M. Bradley,et al.  Theory of ripple topography induced by ion bombardment , 1988 .

[3]  Robert S Averback,et al.  Patterning of metal nanowires by directed ion-induced dewetting , 2006 .

[4]  H. Oechsner.  Untersuchungen zur Festkörperzerstäubung bei schiefwinkligem Ionenbeschuß polykristalliner Metalloberflächen im Energiebereich um 1 keV , 1973 .

[5]  J. Lian,et al.  Highly ordered Ga nanodroplets on a GaAs surface formed by a focused ion beam. , 2008, Physical review letters.

[6]  J. Bohdansky.  A Universal Relation for the Sputtering Yield of Monatomic Solids at Normal Ion Incidence , 1984 .

[7]  R. Ewing,et al.  Patterning Metallic Nanostructures by Ion-Beam-Induced Dewetting and Rayleigh Instability , 2006 .

[8]  J. Muñoz-García,et al.  Order enhancement and coarsening of self-organized silicon nanodot patterns induced by ion-beam sputtering , 2006 .

[9]  J. Blakely,et al.  Lateral Templating for Guided Self‐Organization of Sputter Morphologies , 2005 .

[10]  N. Matsunami,et al.  Theoretical studies on an empirical formula for sputtering yield at normal incidence , 1983 .

[11]  A. Ruoff,et al.  Etching of diamond with argon and oxygen ion beams , 1984 .

[12]  H. Urbassek,et al.  Step edge sputtering yield at grazing incidence ion bombardment. , 2004, Physical review letters.

[13]  J. Bohdansky,et al.  An analytical formula and important parameters for low‐energy ion sputtering , 1980 .

[14]  P. Sigmund,et al.  Depth of origin of sputtered atoms , 1981 .

[15]  Barabási,et al.  Dynamic scaling of ion-sputtered surfaces. , 1995, Physical review letters.

[16]  J. Tsao.  Ion beam assisted film growth: Vol. 3: Beam modification of materials series edited by Tadatsugu Itoh (Elsevier, Amsterdam, 1989) pp. xviii + 440, $147.25/Dfl. 280.00, ISBN 0-444-87280-9 , 1989 .

[17]  G. Carter.  The effects of surface ripples on sputtering erosion rates and secondary ion emission yields , 1999 .

[18]  M. Makeev,et al.  Effect of surface roughness on the secondary ion yield in ion sputtering , 1998 .

[19]  J. Ziegler,et al.  stopping and range of ions in solids , 1985 .

[20]  P. Sigmund.  Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline Targets , 1969 .

[21]  Kurz,et al.  Formation of Ordered Nanoscale Semiconductor Dots by Ion Sputtering. , 1999, Science.

[22]  Noriaki Itoh,et al.  Energy dependence of the ion-induced sputtering yields of monatomic solids , 1984 .

[23]  K. Sun,et al.  Ordered nanocrystals on argon ion sputtered polymer film , 2008 .

[24]  Y. Yamamura,et al.  An empirical formula for angular dependence of sputtering yields , 1984 .