论文信息 - Electroless gold deposition on silicon(100) wafer based on a seed layer of silver

Electroless gold deposition on silicon(100) wafer based on a seed layer of silver

This article describes a method of electroless gold deposition on a Si(100) wafer having a silver surface as seed layer. The seed layer was firstly deposited onto the surface of an etched wafer in an acidic solution of 0.005 mol/L AgNO3+0.06 mol/LHF. The electroless gold deposition is performed by immersing the Ag-activated wafer in an electroless bath with a composition of 1.27×10-3 mol/L [AuCl4]-+2.00×10-2 mol/L NaH2PO2+8.32×10-2 mol/L NH2CH2CH2NH2 (pH = 9.0–9.5). The bath temperature is 50–70 °C. The morphology of the seed layer and the gold film were characterized by atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS).

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