Phase noise analysis of fully-integrated digitally-tuned wideband Si/SiGe BiCMOS VCOs

A 3.4-4.6 GHz fully monolithic voltage-controlled Oscillator (VCO) was designed and manufactured using Silicon Germanium (SiGe) BiCMOS technology. The large tuning range (33%) and low-phase noise: (-108 dBc/Hz @100 kHz offset at 3.4 GHz) are achieved with a combination of coarse tuning via digital selection of MOSCAPs and analog fine-tuning using P-N junction varactors. Approximately 7-10 dB phase noise degradation at 3 MHz offset is observed as the oscillator is digitally switched from the lowest frequency band to the highest band. The role substrate parasitics play on the behavior of phase noise during digital switching is clarified.

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