论文信息 - Optical properties of the Si-doped GaN/Al2O3 films - 字舞流文

Optical properties of the Si-doped GaN/Al2O3 films

A. Stronski | I. Yanchuk | O. Litvin | V. Boiko | M. Vuychik | P. O. Gentsar | N. Zayats

[1] Takehiro Yoshida,et al. Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation method , 2008 .

[2] A. Bonanni,et al. GaN:δ-Mg grown by MOVPE: Structural properties and their effect on the electronic and optical behavior , 2007, 0709.1634.

[3] H. Park,et al. Epitaxial strain energy measurements of GaN on sapphire by Raman spectroscopy , 2005 .

[4] A. N. Smirnov,et al. Phonon dispersion and Raman scattering in hexagonal GaN and AlN , 1998 .

[5] H. Amano,et al. DX-like behavior of oxygen in GaN , 2001 .