High-Performance Amorphous InGaZnO Thin-Film Transistors With HfO2/Lu2O3/HfO2 Sandwich Gate Dielectrics

In this brief, a high-performance amorphous InGaZnO (α-IGZO) thin-film transistor (TFT) with a HfO<sub>2</sub>/Lu<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> (HLH) sandwich gate dielectric is demonstrated for the first time. Compared with the Lu<sub>2</sub>O<sub>3</sub> dielectric, the α-IGZO TFT device using an HLH sandwich gate dielectric exhibited a low threshold voltage of 0.43 V, a high field-effect mobility of 17.2 cm<sup>2</sup> /Vs, a small subthreshold swing of 104 mV/decade, and a high I<sub>ON</sub>/I<sub>OFF</sub> current ratio of 3.08 × 10<sup>-7</sup>, presumably because of the reduction of surface roughness at the dielectric-channel interface. Furthermore, the reliability of voltage stress can be improved using an HLH sandwich dielectric structure.

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