Strength of polysilicon for MEMS devices

The safe, secure and reliable application of microelectromechanical systems (MEMS) devices requires knowledge about the distribution in material and mechanical properties of the small-scale structures. A new testing program at Sandia is quantifying the strength distribution using polysilicon samples that reflect the dimensions of critical MEMS components. The strength of polysilicon fabricated at Sandia's Microelectronic Development Laboratory was successfully measured using samples 2.5 microns thick, 1.7 microns wide with lengths between 15 and 25 microns. These tensile specimens have a freely moving hub on one end that anchors the sample to the silicon die and allows free rotation. Each sample is loaded in uniaxial tension by pulling laterally with a flat tipped diamond in a computer-controlled nanoindenter. The stress-strain curve is calculated using the specimen cross section and gage length dimensions verified by measuring against a standard in the SEM.

[1]  W. Weibull A statistical theory of the strength of materials , 1939 .

[2]  R. L. Edwards,et al.  Tensile testing of polysilicon , 1999 .

[3]  David T. Read,et al.  Measurements of fracture strength and Young's modulus of surface-micromachined polysilicon , 1996, Photonics West - Micro and Nano Fabricated Electromechanical and Optical Components.

[4]  Staffan Greek,et al.  Tensile testing of thin-film microstructures , 1997, Photonics West - Micro and Nano Fabricated Electromechanical and Optical Components.

[5]  J. Connally,et al.  Measurement of slow crack growth in silicon and nickel mechanical devices , 1993, [1993] Proceedings IEEE Micro Electro Mechanical Systems.

[6]  J. D. Sullivan,et al.  Experimental probability estimators for Weibull plots , 1986 .

[7]  William N. Sharpe,et al.  Round-Robin Tests of Modulus and Strength of Polysilicou , 1998 .