论文信息 - Epitaxial lift-off GaAs/AlGaAs metal-semiconductor-metal photodetectors with back passivation

Epitaxial lift-off GaAs/AlGaAs metal-semiconductor-metal photodetectors with back passivation

High-performance thin-film epitaxial lift-off (ELO) photodetectors have potential for integration with independently optimized integrated circuits and waveguides. In this paper, the dark current, responsivity, and frequency response of GaAs/AlGaAs metal-semiconductor-metal (MSM) photodetectors that remain on the growth substrate are compared to ELO detectors with and without back passivation. The passivated ELO detectors perform comparably to the on-wafer devices, while the unpassivated devices exhibit performance degradation. In addition to demonstrating the importance of back passivation, this paper presents the lowest ELO MSM dark current (5 nA at 5 V) for a 200- mu m-diameter device published to date.<<ETX>>

[1] Frank Stern,et al. Photon recycling in semiconductor lasers , 1974 .

[2] E. Yablonovitch,et al. Extreme selectivity in the lift‐off of epitaxial GaAs films , 1987 .

[3] M. Ito,et al. Low dark current GaAs metal-semiconductor-metal (MSM) photodiodes using WSi x contacts , 1986 .

[4] R. A. Moore,et al. Properties of alternately charged coplanar parallel strips by conformal mappings , 1968 .

[5] D. Rogers. MESFET Compatible IMSM Detectors , 1987 .

[6] R. Bhat,et al. Double heterostructure GaAs/AlGaAs thin film diode lasers on glass substrates , 1989, IEEE Photonics Technology Letters.

[7] M. Hargis,et al. 1.3 mu m InGaAs MSM photodetector with abrupt InGaAs/AlInAs interface , 1991, IEEE Photonics Technology Letters.

[8] M. Sugimoto,et al. High efficiency GaAs thin film solar cells by peeled film technology , 1978 .

[9] C. Camperi-Ginestet,et al. Alignable epitaxial liftoff of GaAs materials with selective deposition using polyimide diaphragms , 1991, IEEE Photonics Technology Letters.