论文信息 - Strained-layer InGaAsP diode lasers with tapered gain region for operation at /spl lambda/=1.3 /spl mu/m - 字舞流文

Strained-layer InGaAsP diode lasers with tapered gain region for operation at /spl lambda/=1.3 /spl mu/m

A report is given of the first high-power InP-based tapered lasers. Continuous output powers of 0.5 W with nearly 80% of the power in the central lobe have been obtained. This is the highest reported brightness of a 1.3 /spl mu/m source.<<ETX>>

A. Napoleone | J. D. Woodhouse | J. Donnelly | S. Groves | A. Napoleone | J. Walpole | L. Missaggia | R.J. Bailey | L.J. Missaggia | J.P. Donnelly | J.N. Walpole | S.H. Groves | J.D. Woodhouse | R. Bailey

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