CMOS image sensor using a floating diffusion driving buried photodiode

Two 2.5V VGA CMOS image sensors with 3.45/spl mu/m and 3.1/spl mu/m buried photodiode-pixels on a 0.25/spl mu/m 2P3M CMOS technology are described. The test chips utilize a floating diffusion driving technique to achieve 3-transistors/pixel and 2-transistors/pixel respectively, and operate at 60 frames/s with 49mW dissipation.

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