External cavity InAs∕InP quantum dot laser with a tuning range of 166nm

We have studied the tuning behavior of an external cavity laser in Littrow configuration using antireflection/high-reflection coated InAs∕InGaAsP∕InP quantum dot laser diodes as the amplifying element. Adding the coatings improves the performance of the setup, and the tunability of the external cavity laser output has been increased up to 166nm. Detailed investigations have revealed that laser diode length and width influence the magnitude of the tuning range. Furthermore, the external differential quantum efficiency is systematically increasing as the external cavity laser wavelength is decreasing. These characteristics are discussed in terms of energy levels available in the inhomogeneous broadening of the self-assembled quantum dots.

[1]  Sylvain Raymond,et al.  External-cavity quantum-dot laser tunable through 1.55μm , 2006 .

[2]  Dennis G. Deppe,et al.  1.3 μm InAs quantum dot laser with To=161 K from 0 to 80 °C , 2002 .

[3]  Sylvain Raymond,et al.  External cavity quantum dot tunable laser through 1.55 μm , 2005 .

[4]  J. Fraser,et al.  InAs self-assembled quantum-dot lasers grown on (100) InP , 2002 .

[5]  Daniel T. Cassidy,et al.  Experimental analysis of a broadly tunable InGaAsP laser with compositionally varied quantum wells , 2003 .

[6]  Andreas Stintz,et al.  Extremely low room-temperature threshold current density diode lasers using InAs dots in In/sub 0.15/Ga/sub 0.85/As quantum well , 1999 .

[7]  A. Forchel,et al.  High-temperature operating 1.3-μm quantum-dot lasers for telecommunication applications , 2001, IEEE Photonics Technology Letters.

[8]  Jin Hong Lee,et al.  Long-wavelength laser based on self-assembled InAs quantum dots in InAlGaAs on InP (001) , 2004 .

[9]  M. Amann,et al.  Tunable single and dual mode operation of an external cavity quantum-dot injection laser , 2003 .

[10]  Rui Q. Yang,et al.  Lasing characteristics of InAs quantum-dot lasers on (001) InP substrate , 2003 .

[11]  M. Grundmann Feasibility of 5 Gbit/s wavelength division multiplexing using quantum dot lasers , 2000 .

[12]  S. H. Pyun,et al.  Room temperature operation of InGaAs∕InGaAsP∕InP quantum dot lasers , 2004 .

[13]  Hiroshi Ishikawa,et al.  External grating tunable MQW laser with wide tuning range of 240 nm , 1990 .

[14]  Andreas Stintz,et al.  Low-threshold quantum dot lasers with 201 nm tuning range , 2000 .

[15]  J. Fujimoto,et al.  Optical Coherence Tomography , 1991 .

[16]  P. J. Poole,et al.  Tunable InAs quantum-dot lasers grown on (100) InP , 2003, Microelectron. J..

[17]  A. Stintz,et al.  Tunable grating-coupled laser oscillation and spectral hole burning in an InAs quantum-dot laser diode , 2000, IEEE Journal of Quantum Electronics.

[18]  Room-temperature external cavity GaSb-based diode laser around 2.13μm , 2004 .