Extended wavelength SWIR InGaAs focal plane array: Characteristics and limitations
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C. Besikci | Y. Arslan | C. Besikci | Fikri Oguz | F. Oguz | Y. Arslan
[1] G. A. Gasparian,et al. Room-Temperature InGaAs Detector Arrays For 2.5 µm , 1990, Optics & Photonics.
[2] Michael F. Skrutskie,et al. High sensitivity infrared extended wavelength response InGaAs detectors , 2008, Astronomical Telescopes + Instrumentation.
[3] Vladimir S. Ban,et al. Dark current analysis and characterization of In/sub x/Ga/sub 1-x/As/InAs/sub y/P/sub 1-y/ graded photodiodes with x>0.53 for response to longer wavelengths (>1.7 mu m) , 1992 .
[4] Ramon U. Martinelli,et al. 2.6 μm InGaAs photodiodes , 1988 .
[5] Y. Nemirovsky,et al. Tunneling and 1/f noise currents in HgCdTe photodiodes , 1992 .
[6] Henry Yuan,et al. FPA development: from InGaAs, InSb, to HgCdTe , 2008, SPIE Defense + Commercial Sensing.
[7] Hengjing Tang,et al. Responsivity performance of extended wavelength InGaAs shortwave infrared detector arrays , 2014, Sensing Technologies + Applications.
[8] Xue Li,et al. Analysis of pn-junction degeneration in heating process for extended wavelength InGaAs detectors , 2011, Applied Optics and Photonics China.
[9] Ruud W. M. Hoogeveen,et al. Low-noise InGaAs infrared 1.0- to 2.4-μm focal plane arrays for SCIAMACHY , 1997, Remote Sensing.
[10] Z. Tian,et al. Wavelength extended InGaAs/InAlAs/InP photodetectors using n-on-p configuration optimized for back illumination , 2009 .
[11] Tian Zhao-Bing,et al. Gas Source MBE-Grown Metamorphic InGaAs Photodetectors using InAlAs Buffer and Cap Layers with Cut-off Wavelength up to 2.7 μm , 2008 .
[12] Abhay M. Joshi,et al. Near-infrared (1-3 micron) InGaAs detectors and arrays - Crystal growth leakage current and reliability , 1993, Other Conferences.
[13] Z. Tian,et al. Wavelength extended 2.4 μm heterojunction InGaAs photodiodes with InAlAs cap and linearly graded buffer layers suitable for both front and back illuminations , 2008 .
[14] Cheng Li,et al. Distinction investigation of InGaAs photodetectors cutoff at 2.9 μm , 2010 .
[15] P. Demeester,et al. Dark current optimisation of 2.5 /spl mu/m wavelength, 2% mismatched InGaAs photodetectors on InP , 1998, Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129).
[16] Xiaoli Ji,et al. Deep-level traps induced dark currents in extended wavelength InxGa1−xAs/InP photodetector , 2013 .